GERMANIUM - AN OVERVIEW

Germanium - An Overview

s is usually that of the substrate product. The lattice mismatch results in a sizable buildup of strain Vitality in Ge levels epitaxially grown on Si. This strain Electrical power is mostly relieved by two mechanisms: (i) generation of lattice dislocations for the interface (misfit dislocations) and (ii) elastic deformation of both of those the sub

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